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| Dual N-Channel JFET High Frequency Amplifier CORPORATION 2N5911 / 2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -55oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation Derate above 25oC TO-99 * Tight Tracking * Low Insertion Loss * Good Matching PIN CONFIGURATION One Side 367mW 3.0mW/ oC Both Sides 500mW 4.0mW/ oC NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ORDERING INFORMATION Part CJ1 C S2 G1 D2 D1 G2 S1 Package Hermetic TO-99 Sorted Chips in Carriers Temperature Range -55oC to +150oC -55oC to +150oC 2N5911-12 X2N5912 ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) SYMBOL IGSS BVGSS VGS(off) VGS IG IDSS gfs gfs gos goss Ciss Crss en NF Gate Reverse Current Gate Reverse Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voltage Gate Operating Current Saturation Drain Current (Pulsewidth 300s, duty cycle 3%) Common-Source Forward Transconductance Common-Source Forward Transconductance (Note 1) Common-Source Output Conductance Common-Source Output Conductance (Note 1) Common-Source Input Capacitance (Note 1) Common-Source Reverse Transfer Capacitance (Note 1) Equivalent Short Circuit Input Noise Voltage (Note 1) Spot Noise Figure (Note 1) 7 5000 5000 -25 -1 -0.3 -5 -4 -100 -100 40 10,000 10,000 100 150 5 1.2 20 1 nV Hz dB f = 10kHz f = 10kHz RG = 100k VDG = 10V, ID = 5mA pF f = 1MHz S pA nA mA VDS = 10V, VGS = 0V f = 1kHz f = 100MHz f = 1kHz f = 100MHz TA = 150 oC V PARAMETER MIN MAX -100 -250 UNITS pA nA IG = -1A, VDS = 0 VDS = 10V, ID = 1nA VDG = 10V, ID = 5mA TEST CONDITIONS VGS = -15V, VDS = 0 TA = 150 oC 2N5911 / 2N5912 CORPORATION ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC unless otherwise specified) SYMBOL | IG1 -IG2 | IDSS1 IDSS2 | VGS1 -VGS2 | | VGS1 - VGS2 | T PARAMETER Differential Gate Current Saturation Drain Current Ratio Differential Gate-Source Voltage Gate-Source Voltage Differential Drift (Measured at end points, TA and TB) 0.95 2N5911 2N5912 UNITS nA TEST CONDITIONS VDG = 10V, ID = 5mA TA = 125oC MIN MAX MIN MAX 20 1 10 20 20 0.95 1 0.95 0.95 20 1 15 40 V/ oC 40 1 VDG = 10V, ID = 5mA mV TA = 25oC TB = 125oC TA = -55oC TB = 25 oC f = 1kHz VDS = 10V, VGS = 0 (Pulsewidth 300A, duty cycle 3%) gfs1 gfs2 Transconductance Ratio NOTE 1: For design reference only, not 100% tested. |
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